Strained‐layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102034
Reference19 articles.
1. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
2. Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy
3. Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser
4. High‐power conversion efficiency in a strained InGaAs/AlGaAs quantum well laser
5. High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy
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1. Comparative analysis of the optical quality of single In0.1Ga0.9As/Al0.33Ga0.67As quantum wells grown by molecular beam epitaxy on (100) and (311) GaAs substrates;Applied Physics Letters;1995-09-25
2. The performances of (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice strained single-quantum-well laser on GaAs substrate;IEEE Journal of Quantum Electronics;1994-04
3. On the semiconductor laser logarithmic gain-current density relation;IEEE Journal of Quantum Electronics;1993-05
4. OPTICAL GAIN IN III–V BULK AND QUANTUM WELL SEMICONDUCTORS;Quantum Well Lasers;1993
5. InGaAs/AlGaAs ridge waveguide lasers utilizing an InGaP etch-stop layer;Semiconductor Science and Technology;1992-11-01
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