Comparative analysis of the optical quality of single In0.1Ga0.9As/Al0.33Ga0.67As quantum wells grown by molecular beam epitaxy on (100) and (311) GaAs substrates-Reference-Cited by-同舟云学术

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Comparative analysis of the optical quality of single In0.1Ga0.9As/Al0.33Ga0.67As quantum wells grown by molecular beam epitaxy on (100) and (311) GaAs substrates

Published:1995-09-25 Issue:13 Volume:67 Page:1885-1887
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Brandt O.,Kanamoto K.,Tsugami M.,Isu T.,Tsukada N.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114365

Reference14 articles.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy;Physical Review Applied;2022-04-15

3. off-State Current Limits of Narrow Bandgap MOSFETs;IEEE Transactions on Electron Devices;2006-11

4. Interface charge and nonradiative carrier recombination in Ga[sub 2]O[sub 3]–GaAs interface structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

5. Insulator passivation of In/sub 0.2/Ga/sub 0.8/As-GaAs surface quantum wells;IEEE Journal of Quantum Electronics;1998

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