Sample preparation by focused ion beam without argon ion milling for quantitative electron holography of p-n junctions
Author:
Affiliation:
1. Center for Complex Analysis, GLOBALFOUNDRIES, Malta, New York 12020, USA
2. Advanced Technology Development, GLOBALFOUNDRIES, Malta, New York 12020, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5086797
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1. Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography
2. Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography
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5. Application of electron holography to analysis of submicron structures
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