Combining 4D Scanning Transmission Electron Microscopy and Electron Precession for Mapping of Electric Field at the Nanoscale Over Large Field of View-Reference-Cited by-同舟云学术

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Combining 4D Scanning Transmission Electron Microscopy and Electron Precession for Mapping of Electric Field at the Nanoscale Over Large Field of View

Published:2023-07-24 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Cao Shaohong¹,Liang Chao¹,Xu Houqiang¹,Peng Huayu¹,Sun Xiaoxiao¹,Zhang Zhengfei¹,Pu Kui¹,Zhang Aijun¹,Xu Jeffery¹,Liao Heng¹

Affiliation:

1. Hisilicon (Shanghai) Technologies Co., Ltd.,Shanghai,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10248978/10248979/10249035.pdf?arnumber=10249035

Reference14 articles.

1. Sample preparation by focused ion beam without argon ion milling for quantitative electron holography of p-n junctions

2. Quantitative off-axis electron holography of GaAsp-njunctions prepared by focused ion beam milling

3. Comparative study on the specimen thickness measurement using EELS and CBED methods

4. Phase contrast STEM for thin samples: Integrated differential phase contrast

5. Suppressing dynamical diffraction artefacts in differential phase contrast scanning transmission electron microscopy of long-range electromagnetic fields via precession

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