Phosphorus diffusion in isoconcentration backgrounds under inert conditions in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108688
Reference13 articles.
1. Supersaturation of self‐interstitials and undersaturation of vacancies during phosphorus diffusion in silicon
2. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect
3. On models of phosphorus diffusion in silicon
4. Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self‐interstitial phenomena
5. Model for defect‐impurity pair diffusion in silicon
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