Model for defect‐impurity pair diffusion in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98650
Reference17 articles.
1. On the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon
2. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect
3. Concentration Dependence of the Diffusion Coefficient of Boron in Silicon
4. Dopant diffusion in silicon: A consistent view involving nonequilibrium defects
5. Numerical Solution of Phosphorus Diffusion Equation in Silicon
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