On the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654200
Reference16 articles.
1. Detailed analysis of thin phosphorus-diffused layers in p-type silicon
2. Effects of High Phosphorus Concentration on Diffusion into Silicon
3. Shallow phosphorus diffusion profiles in silicon
4. PRE‐PRECIPITATION OF PHOSPHORUS IN HEAVILY DOPED SILICON
5. Effect of Extremely Thin Nitrogenous Surface Films on Phosphorus-impurity Profiles in Silicon
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