Effect of Extremely Thin Nitrogenous Surface Films on Phosphorus-impurity Profiles in Silicon-Reference-Cited by-同舟云学术

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Effect of Extremely Thin Nitrogenous Surface Films on Phosphorus-impurity Profiles in Silicon

Published:1971-03 Issue:2 Volume:15 Page:132-139
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Makris J.,Ferris-Prabhu A.,Joshi M. L.

Publisher

IBM

Subject

General Computer Science

Link

http://xplorestaging.ieee.org/ielx5/5288520/5391561/05391567.pdf?arnumber=5391567

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dopants;Computational Microelectronics;2004

2. Physics and Chemistry of Impurity Diffusion and Oxidation of Silicon;Silicon Integrated Circuits;1981

3. Concentration Profiles of Diffused Dopants in Silicon;Impurity Doping Processes in Silicon;1981

4. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect;Journal of The Electrochemical Society;1977-07-01

5. Boron Diffusion Coefficient Increased by Phosphorus Diffusion;Journal of The Electrochemical Society;1974

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