Ion implantation in β-Ga2O3: Physics and technology

Author:

Nikolskaya Alena1ORCID,Okulich Evgenia1,Korolev Dmitry1ORCID,Stepanov Anton2,Nikolichev Dmitry1ORCID,Mikhaylov Alexey1ORCID,Tetelbaum David1ORCID,Almaev Aleksei3ORCID,Bolzan Charles Airton4ORCID,Buaczik Antônio4,Giulian Raquel4ORCID,Grande Pedro Luis4ORCID,Kumar Ashok5,Kumar Mahesh5ORCID,Gogova Daniela16ORCID

Affiliation:

1. Research Institute of Physics and Technology, Lobachevsky University, Nizhny Novgorod 603950, Russia

2. Chuvash State Agricultural Academy, Cheboksary 428017, Russia

3. Research and Development Center for Advanced Technologies in Microelectronics, Tomsk State University, Tomsk 634050, Russia

4. Ion Implantation Laboratory, Institute of Physics—Federal University of Rio Grande do Sul, Porto Alegre 91501-970, Brazil

5. Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342037, India

6. Centre for Materials Science and Nanotechnology, University of Oslo, Blindern, 0316 Oslo, Norway

Funder

Russian Foundation for Basic Research

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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