Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1489479
Reference16 articles.
1. Ultrafast all-optical switching at 1.3 [micro sign]m/1.55 [micro sign]m using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions
2. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
3. Relaxation Time of Short Wavelength Intersubband Transition in InGaAs/AlAs Quantum Wells
4. Feasibility of1.55 µmIntersubband Photonic Devices Using InGaAs/AlAs Pseudomorphic Quantum Well Structures
5. Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100–1550 nm range
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1. Modeling of Ultrafast Waveguided Electro-Absorption Modulator at Telecommunication Wavelength (λ = 1.55 μm) Based on Intersubband Transition in an InGaAs/AlAs/AlAsSb Asymmetric Coupled Double Quantum Well Lattice-Matched to InP;IEEE Journal of Quantum Electronics;2021-08
2. Ultrafast intersubband relaxation dynamics at 1.55μm in GaN/AlN multiple quantum disk nanocolumns;Journal of Luminescence;2008-05
3. Short-wavelength quantum cascade lasers;SPIE Proceedings;2008-02-07
4. Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy;Applied Physics Letters;2007-09-03
5. Improved performance of In0.6Ga0.4As∕AlAs0.67Sb0.33∕InP quantum cascade lasers by introduction of AlAs barriers in the active regions;Applied Physics Letters;2007-07-30
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