Reduced free carrier absorption loss in midinfrared double heterostructure diode lasers grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2779246
Reference11 articles.
1. Room-temperature continuous-wave operation of quantum-cascade lasers at λ∼4μm
2. High-temperature interband cascade lasers emitting at λ=3.6–4.3μm
3. Investigation of mid-infrared type-II “W” diode lasers
4. 6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm
5. Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells
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1. Spontaneous and stimulated emission in InAsSb-based LED heterostructures;Infrared Physics & Technology;2017-09
2. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers;Applied Physics Letters;2014-07-21
3. Single crystalline InAsxSb1−x films with cut-off wavelength of 7–8μm grown on (100) InSb substrates by liquid phase epitaxy;Journal of Alloys and Compounds;2012-09
4. LPE growth and characterization of mid-infrared InAs0.85Sb0.15 film on InAs substrate;Journal of Crystal Growth;2011-07
5. Midinfrared GaInSb/AlGaInSb quantum well laser diodes operating above 200 K;Applied Physics Letters;2009-03-02
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