Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100–1550 nm range
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1287233
Reference24 articles.
1. Thermal comparison of long-wavelength vertical-cavity surface-emitting laser diodes
2. 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature
3. InAsP/InGaAsP periodic gain structure for 1.5 μm vertical cavity surface emitting laser applications
4. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
5. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
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