1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121116
Reference9 articles.
1. Gallium arsenide and other compound semiconductors on silicon
2. Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate
3. Anti‐phase direct bonding and its application to the fabrication of InP‐based 1.55 μm wavelength lasers on GaAs substrates
4. Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding
5. Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration
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