Rapid thermal anneal of hydrogen‐implanted metal‐silicon nitride‐silicon dioxide‐silicon structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103201
Reference10 articles.
1. Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures
2. High‐temperature H2anneal of interface defects in electron‐beam‐irradiated MNOS structures
3. Fabrication of surface‐channel charge‐coupled devices with ultralow density of interface states
4. Current gain recovery in silicon nitride passivated planar transistors by hydrogen implantation
5. Hydrogenation by ion implantation for scaled SOI/PMOS transistors
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1. Experimental evidence of trap level modulation in silicon nitride thin films by hydrogen annealing;Japanese Journal of Applied Physics;2018-05-21
2. Influence of silicon dioxide-silicon interface trap charges on the performance of monolithic metal-zinc oxide-silicon nitride-silicon dioxide-silicon convolver;IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control;2003-01
3. Characteristics of surface acoustic wave convolver in the monolithic metal–zinc oxide–silicon nitride–silicon dioxide–silicon structure;Applied Physics Letters;2002-03-11
4. Silicon oxide conductivity of hydrogen ion implanted polysilicon thin film transistors;Vacuum;1996-10
5. The effect of rapid thermal annealing in vacuum on the properties of thin SiO2films;Journal of Physics D: Applied Physics;1995-05-14
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