Hydrogenation by ion implantation for scaled SOI/PMOS transistors-Reference-Cited by-同舟云学术

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Hydrogenation by ion implantation for scaled SOI/PMOS transistors

Published:1985-03 Issue:3 Volume:6 Page:139-141
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Singh H.J.,Saraswat K.C.,Shott J.D.,McVittie J.P.,Meindl J.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31937/01485226.pdf?arnumber=1485226

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogenation of Polycrystalline Silicon Thin‐Film Transistors;New Advances in Hydrogenation Processes - Fundamentals and Applications;2017-01-25

2. Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors;Japanese Journal of Applied Physics;2013-03-01

3. Enhanced Characteristics of In0.5Ga0.5As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment;IEICE Transactions on Electronics;2008-05-01

4. Electron trapping probabilities in hydrogen ion implanted silicon dioxide films thermally grown on polycrystalline silicon;Microelectronics Journal;2000-03

5. Passivation of Poly-Si Thin-Film Transistors With Ion-Implanted Deuterium;MRS Proceedings;1998-01

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