Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors-Reference-Cited by-同舟云学术

Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors

Published:2013-03-01 Issue:3S Volume:52 Page:03BB01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shika Yusuke,Bessho Takuro,Okabe Yasunori,Ogata Hiroyuki,Kamo Shinya,Kitahara Kuninori,Hara Akito

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

1. Mobility enhancement limit of excimer-laser-crystallized polycrystalline silicon thin film transistors

2. Hydrogenation of transistors fabricated in polycrystalline-silicon films

3. High performance low-temperature poly-Si n-channel TFTs for LCD

4. Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance evaluation of polycrystalline Si_1−xGe_x thin-film transistors fabricated by continuous-wave laser lateral crystallization on glass substrates;Japanese Journal of Applied Physics;2024-06-03

2. Four-terminal polycrystalline-silicon vertical thin-film transistors on glass substrates;Japanese Journal of Applied Physics;2024-04-01

3. High Pressure Deuterium Annealing for Improved Immunity Against Stress-Induced Threshold Voltage Degradation;IEEE Transactions on Device and Materials Reliability;2022-09

4. Impact of Post-Metal Annealing With Deuterium or Nitrogen for Curing a Gate Dielectric Using Joule Heat Driven by Punch-Through Current;IEEE Electron Device Letters;2021-02

5. Triboelectric nanogenerator for a repairable transistor with self-powered electro-thermal annealing;Nano Energy;2020-10