Four-terminal polycrystalline-silicon vertical thin-film transistors on glass substrates

Author:

Suzuki Kosei,Kusunoki Kotaro,Ito Yuto,Hara Akito

Abstract

Abstract This study aimed to fabricate n-channel four-terminal (4 T) polycrystalline silicon (poly-Si) vertical thin-film transistors (VTFTs) with submicron gate lengths on a glass substrate. The 4 T VTFTs have a poly-Si active layer crystallized via metal-induced crystallization using nickel (Ni-MIC), a top gate (TG), and a bottom gate (BG). Here, the TG covers all the channel regions, and the BG affects only a part of the channel region. A double-gate drive (simultaneous operation of both gates) displayed a high I on/I off ratio and small s.s. compared with those of a single-gate drive. In addition, the threshold voltage (V th) of the TG drive varied depending on the BG voltages (V BG), with a γ-value (=ΔV thV BG) of 0.17. This value is smaller than the theoretically expected value because of the localized effects of the BG on the channel region and the inferior crystalline quality of the Ni-MIC poly-Si film.

Publisher

IOP Publishing

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