Large-grain polycrystalline silicon films with low intragranular defect density by low-temperature solid-phase crystallization without underlying oxide-Reference-Cited by-同舟云学术

Large-grain polycrystalline silicon films with low intragranular defect density by low-temperature solid-phase crystallization without underlying oxide

Published:2002-03 Issue:5 Volume:91 Page:2910-2915
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bo Xiang-Zheng,Yao Nan,Shieh Sean R.,Duffy Thomas S.,Sturm J. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1448395

Reference23 articles.

1. The Low Temperature Polysilicon TFT Technology for Manufacturing of Active Matrix Liquid Crystal Displays

2. Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

3. Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6gas

4. Influence of the Grain Boundaries and Intragrain Defects on the Performance of Poly‐Si Thin Film Transistors

5. The effect of surface nucleation on the evolution of crystalline microstructure during solid phase crystallization of amorphous Si films on SiO2

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