The Low Temperature Polysilicon TFT Technology for Manufacturing of Active Matrix Liquid Crystal Displays-Reference-Cited by-同舟云学术

The Low Temperature Polysilicon TFT Technology for Manufacturing of Active Matrix Liquid Crystal Displays

Published:1994 Issue: Volume:345 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Morita Tatsuo,Tsuchimoto Shuhei,Hashizume Nobuo

Abstract

AbstractThe amorphous silicon thin transistor (a-Si TIFT) has successfully industrialized the active matrix liquid crystal displays (AMLCDs), which would get a vast market on the basis of their wide potential use for displays. Whereas, the polysilicon TFT (p-Si TFT) also has been intensely investigated and intended to realize smarter AMLCDs, with monolithic peripheral circuits.In this paper, we will discuss the applicable range of low temperature p-Si TFTs compared with high temperature p-Si TFTs. After reviewing the materials which comprise low temperature p-Si TFTs, we will introduce our self aligned aluminum gate process which could allow fast addressing even in enlarged AMLCDs in the future.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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