Photoluminescence and time-resolved photoluminescence characteristics of InxGa(1−x)As/GaAs self-organized single- and multiple-layer quantum dot laser structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119691
Reference14 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
3. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
4. Initial growth stage and optical properties of a three‐dimensional InAs structure on GaAs
5. In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001)
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