Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4808337
Reference46 articles.
1. State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots
2. Rapid carrier relaxation in self-assembledInxGa1−xAs/GaAs quantum dots
3. Rapid carrier relaxation inIn0.4Ga0.6As/GaAsquantum dots characterized by differential transmission spectroscopy
4. Annealing induced transition of flat strained InGaAs epilayers into three-dimensional islands
5. Shape control of InGaAs nanostructures on nominal GaAs(001): dashes and dots
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1. Interdot carrier and spin dynamics in a two-dimensional high-density quantum-dot array of InGaAs with quantum dots embedded as local potential minima;Semiconductor Science and Technology;2019-01-07
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3. Effect of phonon confinement on one- and two-polar optical phonon capture processes in quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2015-02
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5. Growth and temperature dependent photoluminescence of InGaAs quantum dot chains;Applied Surface Science;2014-03
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