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Annealing-induced change in quantum dot chain formation mechanism

Published:2014-12 Issue:12 Volume:4 Page:127142
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Park Tyler D.¹,Colton John S.¹,Farrer Jeffrey K.¹,Yang Haeyeon²,Kim Dong Jun³

Affiliation:

1. Department of Physics and Astronomy, Brigham Young University, Provo UT 84602, USA

2. Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, USA

3. IPG Photonics Corporation, Oxford, MA 01540, USA

Funder

National Science Foundation (NSF)

National Aeronautics and Space Administration (NASA)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/12/1.4905053.pdf?itemId=/content/aip/journal/adva/4/12/10.1063/1.4905053&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference32 articles.

1. Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure

2. 1.3-1.4 µm photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates

3. Quantum dot infrared photodetectors

4. QUANTUM DOT OPTO-ELECTRONIC DEVICES

5. Quantum Communication through an Unmodulated Spin Chain

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates;Journal of Alloys and Compounds;2022-06

2. 13 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers;Photonics Research;2018-03-27

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