1.3-1.4 µm photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates-Reference-Cited by-同舟云学术

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1.3-1.4 µm photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates

Published:2000-11-09 Issue:4 Volume:11 Page:323-326
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Egorov V A,Cirlin G E,Polyakov N K,Petrov V N,Tonkikh A A,Volovik B V,Musikhin Yu G,Zhukov A E,Tsatsul'nikov A F,Ustinov V M

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/11/i=4/a=326/pdf

Reference11 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Formation of InAs quantum dots on a silicon (100) surface

3. 1.3 μm room-temperature GaAs-based quantum-dot laser

4. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands

5. Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mathematical modelling of optical properties of CdSe/ZnS core shell quantum dot;Optik;2018-04

2. Annealing-induced change in quantum dot chain formation mechanism;AIP Advances;2014-12

3. Structural and Optical Properties of Self-assembled InAs Quantum Dots as a Function of Rapid Thermal Annealing Temperature;Korean Journal of Materials Research;2006-03-27

4. Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures;Technical Physics Letters;2002-03

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