Annealing induced transition of flat strained InGaAs epilayers into three-dimensional islands
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2736637
Reference17 articles.
1. QUANTUM DOT OPTO-ELECTRONIC DEVICES
2. Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)
3. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films ofInxGa1−xAs on GaAs(100)
4. Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
5. On the stability of surfaces of stressed solids
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