Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4947004
Reference23 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. AlGaN/GaN HEMT With 300-GHz $f_{\max}$
3. Power electronics on InAlN/(In)GaN: Prospect for a record performance
4. E. Kohn and F. Medjdoub , in International Workshop on Physics of Semiconductor Device (IWPSD), Mumbai, December 16–20, 2007, p. 311.
5. Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
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