Alloy broadening of the emission barrier of theDXcenter in aluminum gallium arsenide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101211
Reference16 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
3. Lattice relaxation of pressure‐induced deep centers in GaAs:Si
4. Deep donor model for the persistent photoconductivity effect
5. Determination of the photoionization threshold of the deep donor in Al0.33Ga0.67As:Si
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Process control of high volume pseudomorphic high electron mobility transistor and metal–semiconductor field effect transistor molecular beam epitaxy production using temperature-dependent photoluminescence;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
2. Temperature Dependent Photoluminescence Study of High Silicon doped AIGaAs and the Correlation between the Photoluminescence Spectra and the Doping Level;MRS Proceedings;1999
3. Thermal emission processes of DX centres in AlxGa1−xAs:Si;Solid-State Electronics;1997-01
4. Deep donor levels in Sn‐doped AlxGa1−xAs;Journal of Applied Physics;1992-06-15
5. Deep levels and DX centers in AlxGa1−xAs/GaAs. I. Composition dependence study;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-01
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