Lattice relaxation of pressure‐induced deep centers in GaAs:Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98437
Reference17 articles.
1. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
2. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
3. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
4. Deep donor model for the persistent photoconductivity effect
5. A New Model of Deep Donor Centers in AlxGa1-xAs
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1. Electron-limiting defect complex in hyperdoped GaAs: TheDDXcenter;Physical Review B;2013-03-29
2. Bipolaron mechanism of DX center in AlxGa1-xAs:Si;Acta Physica Sinica;2010
3. DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content;Superlattices and Microstructures;2009-06
4. Stability of theDX−Center in GaAs Quantum Dots;Physical Review Letters;2005-05-09
5. DX− center formation in planar-doped GaAs:Si in strong electric fields;Journal of Experimental and Theoretical Physics;2004-09
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