Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to n-GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2899942
Reference15 articles.
1. Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN
2. High-performance GaN p-n junction photodetectors for solar ultraviolet applications
3. Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors
4. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
5. Thermally stable PtSi Schottky contact on n-GaN
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2. High gain GaN ultraviolet Schottky photodetector with Al-doped ZnO interlayer;Surfaces and Interfaces;2021-12
3. Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization;Thin Solid Films;2019-04
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