Investigation of the P–As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1338520
Reference38 articles.
1. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
2. High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy
3. Band offsets ofGa0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions
4. Transistor‐based evaluation of conduction‐band offset in GaInP/GaAs heterojunction
5. Gas source molecular beam epitaxy growth of GaAs/InGaP superlattice as optical confinement layers in 0.98 μm InGaAs/InGaP strained quantum well lasers
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2. Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal–Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2012-05-02
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4. Competitive Kinetics Model to Explain Surface Segregation of Indium during InGaP Growth by Using Metal Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2009-01-20
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