Band offsets ofGa0.5In0.5P/GaAs single quantum wells from pressure-induced type-II transitions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.6465/fulltext
Reference30 articles.
1. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
2. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
3. Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
4. Internal photoemission and energy‐band offsets in GaAs‐GaInPp‐I‐Nheterojunction photodiodes
5. Conduction‐band discontinuity in InGaP/GaAs measured using both current‐voltage and photoemission methods
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1. Determination of the valence band offset of MOVPE-grownIn0.48Ga0.52P∕GaAsmultiple quantum wells by admittance spectroscopy;Physical Review B;2008-03-14
2. Admittance spectroscopy of GaAs/InGaP MQW structures;Materials Science and Engineering: B;2008-02
3. First principles valence band offset for Ga-interface in GaInP/GaAs superlattice;Physica E: Low-dimensional Systems and Nanostructures;2006-06
4. Band alignment between GaAs and partially ordered GaInP;Applied Physics Letters;2002-04-29
5. The Physics of Tunable Disorder in Semiconductor Alloys;Spontaneous Ordering in Semiconductor Alloys;2002
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