Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM

Abstract

At present, the physical mechanism of complementary resistive switching (CRS) devices remains controversial. In this Letter, stable CRS can be achieved in Pt/AlOxNy/Ta resistive random access memory (RRAM). A dynamic evolution from bipolar resistive switching to CRS can be evidently observed in non-inert electrodes RRAM. The causes of CRS behavior are analyzed in detail, and these phenomena are attributed to the different oxidation degrees of the top electrode and propose that the transition state can be used as a signal for the emergence of CRS behavior. Moreover, the model is partially supported by measured switching behavior of the Pt/AlOxNy/TaOx device. This research contributes to the understanding of the CRS behavior physical mechanism in non-inert electrodes RRAM devices.