Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4812486
Reference40 articles.
1. Low‐Frequency Negative Resistance in Thin Anodic Oxide Films
2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
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4. Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
5. Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
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