Design and demonstration of Cu/Al<sub>2</sub>O<sub>3</sub> /Cu RRAM with complementary resistance switching characteristic-Reference-Cited by-同舟云学术

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Design and demonstration of Cu/Al₂O₃ /Cu RRAM with complementary resistance switching characteristic

Published:2023-03-07 Issue: Volume: Page:
ISSN:
Container-title:2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Yuan Huanmei¹,Char Yang²,Dai Shunqi¹,Estrada Cristine Jin¹,Zhang Yuqing¹,Xiong Annan¹,Bai Hao³,Du Guangyu²,Cai Songhua²,Li Zhimin²,Xu Songcen¹,Chan Mansun¹

Affiliation:

1. Hong Kong University of Science & Technology,Department of Electronic & Computer Engineering,Kowloon, Hong Kong,China

2. The Hong Kong Polytechnic University,Department of Applied Physics,Kowloon, Hong Kong,China

3. School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing,Beijing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10102927/10102928/10102970.pdf?arnumber=10102970

Reference11 articles.

1. Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon

2. Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM

3. Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM

4. Memristive technologies for data storage, computation, encryption, and radio-frequency communication

5. From Ferroelectric Material Optimization to Neuromorphic Devices;mikolajick;Advanced Materials,2022

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