Comparative study of the substrate‐film interfaces of GaAs grown by two molecular beam epitaxial methods
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103880
Reference5 articles.
1. Carrier compensation at interfaces formed by molecular beam epitaxy
2. Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
3. The origin of a highly resistive layer at a growth‐interrupted interface of GaAs grown by molecular‐beam epitaxy
4. Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation
5. On the possibility of MBE growth interface modification by hydrogen
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic;Journal of Crystal Growth;1997-05
2. In-Situ Etch to Improve Chemical Beam Epitaxy Regrown AlgaAs/GaAs Interfaces for HBT Applications;MRS Proceedings;1996
3. Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200 °C;Journal of Applied Physics;1992-06-15
4. Effects of a buffer layer on free-carrier depletion in n-type GaAs;IEEE Transactions on Electron Devices;1991-06
5. Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy;Journal of Crystal Growth;1991-04
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