Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Comparative study of the substrate‐film interfaces of GaAs grown by two molecular beam epitaxial methods
2. Carrier compensation at interfaces formed by molecular beam epitaxy
3. Evidence for deep centers in n-InP grown by MOVPE
4. High quality epitaxial indium phosphide and indium alloys grown using trimethylindium and phosphine in an atmospheric pressure reactor
5. Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition
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1. Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films;Applied Physics Letters;2015-12-21
2. Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface;Journal of Materials Research;2012-06-12
3. Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO2;Applied Physics Express;2010-05-14
4. Effects of Low-Oxygen-Content Metalorganic Precursors on AlInAs and High Electron Mobility Transistor Structures with the Thick AlInAs Buffer Layer;Japanese Journal of Applied Physics;2003-08-15
5. Chemical-bonding structure of InP surface in MOVPE studied by surface photo-absorption;Journal of Electronic Materials;1996-05
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