Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4938471
Reference31 articles.
1. Surface charge accumulation of InN films grown by molecular-beam epitaxy
2. Surface structure and chemical states of a-plane and c-plane InN films
3. Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN
4. Hall and Seebeck measurement of ap-nlayer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer
5. Surface Electron Accumulation and the Charge Neutrality Level inIn2O3
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