Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.235302/fulltext
Reference31 articles.
1. Analysis of the Hall effect device using an anisotropic material
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3. Causes of incorrect carrier-type identification in van der Pauw–Hall measurements
4. Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface
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