Kinetically stabilized high-temperature InN growth-Reference-Cited by-同舟云学术

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Kinetically stabilized high-temperature InN growth

Published:2020-04 Issue: Volume:536 Page:125574
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cross G. Brendan,Ahmad Zaheer,Seidlitz Daniel,Vernon Mark,Dietz Nikolaus,Deocampo Daniel,Gebregiorgis Daniel,Lei Sidong,Kozhanov Alexander

Funder

National Science Foundation

U.S. Department of Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference53 articles.

1. III-nitrides for energy production: photovoltaic and thermoelectric applications;Lu;Semicond. Sci. Technol.,2013

2. Band gap of InN and in-rich InxGa1—xN alloys (0.36;Davydov;Phys. Status Solidi B,2002

3. When group-III nitrides go infrared: New properties and perspectives;Wu;J. Appl. Phys.,2009

4. Thermal stability of indium nitride single crystal films;Guo;J. Appl. Phys.,1993

5. Crystal growth of Iii-N compounds under high nitrogen pressure;Grzegory;Phys. B Condens. Matter.,1993

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent progress of indium-bearing group-III nitrides and devices: a review;Optical and Quantum Electronics;2024-09-12

2. Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer;Crystal Growth & Design;2024-07-09

3. Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications;Advanced Materials Interfaces;2022-03-25

4. Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes;Coatings;2021-12-07

5. Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD;Coatings;2020-12-04

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