Surface charge accumulation of InN films grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1562340
Reference12 articles.
1. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
2. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
3. High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy
4. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
5. Unusual properties of the fundamental band gap of InN
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