Optical doping and damage formation in AlN by Eu implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3291100
Reference29 articles.
1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
2. Rare earth doped III-nitrides for optoelectronics
3. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
4. Site specific Eu3+ stimulated emission in GaN host
5. Impact of AlGaN on luminescence capability of rare-earth ions in AlGaN
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