Microstructural modifications induced by He implantation at elevated temperature in AlN

Author:

Jublot-Leclerc S.,Bouhali G.,Bachelet C.,Pallier F.,Largeau L.,Declémy A.,Gentils A.

Publisher

Elsevier BV

Reference50 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres;Taniyasu;Nature,2006

2. Giant piezoelectricity of deformed aluminum nitride stabilized through noble gas interstitials for energy efficient resonators;Fiedler;Adv. Elect. Mater.,2021

3. The effect of low energy helium implantation on the structural, vibrational, and piezoelectric properties of AlN thin films;Sharma;Phys. B Condens. Matter,2021

4. Vibration energy harvesting with aluminum nitride-based piezoelectric devices;Elfrink;J. Micromech. Microeng.,2009

5. Piezoelectric ultrasonic transducer based on flexible AlN;Mastronardi;Microelectron. Eng.,2014

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