Thermal droop in high-quality InGaN LEDs
Author:
Affiliation:
1. Soraa, Inc., 6500 Kaiser Dr., Fremont, California 94555, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5124123
Reference22 articles.
1. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
2. Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
3. Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
4. Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures
5. Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
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