Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells-Reference-Cited by-同舟云学术

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Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

Published:2012-10-29 Issue:18 Volume:101 Page:181105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lang J. R.,Young N. G.,Farrell R. M.,Wu Y.-R.,Speck J. S.

Funder

Defense Advanced Research Projects Agency

U.S. Department of Energy

National Science Council Taiwan

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4765068

Reference27 articles.

1. Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method

2. Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices

3. InGaN solar cell requirements for high-efficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices

4. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

5. High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

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