Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices-Reference-Cited by-同舟云学术

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Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices

Published:2012-03 Issue:5 Volume:111 Page:054503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Toledo Nikholas G.,Friedman Daniel J.,Farrell Robert M.,Perl Emmett E.,(Tony) Lin Chieh-Ting,Bowers John E.,Speck James S.,Mishra Umesh K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3690907

Reference28 articles.

1. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

2. Simulation of In0.65Ga0.35N single-junction solar cell

3. Design and characterization of GaN∕InGaN solar cells

4. physica status solidi (b)

5. Unusual properties of the fundamental band gap of InN

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1. Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations;AIP Advances;2021-09-01

2. Simulation analysis to optimize the performance of homojunction p-i-n In0.7Ga0.3N solar cell;Semiconductor Physics, Quantum Electronics and Optoelectronics;2021-06-16

3. Quantum Well Solar Cells: Principles, Recent Progress, and Potential;IEEE Journal of Photovoltaics;2019-03

4. Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices;Japanese Journal of Applied Physics;2017-02-20

5. Embedded Void Approach for Nitride Based Multi-Junction Photovoltaic Cells;55th AIAA Aerospace Sciences Meeting;2017-01-05

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