Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells-Reference-Cited by-同舟云学术

Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells

Published:2024-08-22 Issue:35 Volume:16 Page:46889-46896
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhou Yinuo¹²^ORCID,Zhang Honghua¹²,Li Zhenfei¹,Huang Shenglei¹³^ORCID,Du Junlin¹,Han Anjun¹,Shi Jianhua¹,Wang Guangyuan¹,Shi Qiang¹,Zhao Wenjie¹,Fu Haoxin⁴,Fan Bin⁴,Meng Fanying¹²,Liu Wenzhu¹²,Liu Zhengxin¹²³,Zhang Liping¹²

Affiliation:

1. Research Center for New Energy Technology, State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Changning, Shanghai 200050, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Shijingshan, Beijing 100049, China

3. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

4. Tongwei New Energy (Chengdu) Company, Ltd., Chengdu, Sichuan 610200, China

Funder

National Key Research and Development Program of China

Chinese Academy of Sciences, Shanghai Branch

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Shanghai Rising-Star Program

Key Laboratory of National Defense for Science and Technology of China

Publisher

American Chemical Society (ACS)