Electron beam‐enhanced etching of InAs in Cl2gas and novelinsitupatterning of GaAs with an InAs mask layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110663
Reference14 articles.
1. Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography
2. Vacuum lithography forinsitufabrication of buried semiconductor microstructures
3. Electron‐beam‐induced pattern etching of AlGaAs using an ultrathin GaAs oxide as a resist
4. Electron‐beam‐induced pattern etching of AlGaAs using an ultrathin GaAs oxide as a resist
5. Electron beam induced modification of GaAs surfaces for maskless thermal Cl2 etching
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface Passivation Effect of Electron-Beam Resist on InAs Quantum Dots and Their Improved Luminescence Efficiency;2007 IEEE 19th International Conference on Indium Phosphide & Related Materials;2007-05
2. Ultraclean etching of GaAs by HCl gas and in situ overgrowth of (Al)GaAs by molecular beam epitaxy;Journal of Applied Physics;1998-01
3. Selective epitaxy with in situ mask processing and pulse plasma;Advances in Colloid and Interface Science;1997-09
4. Electron-beam induced etching of resist with water vapor as the etching medium;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11
5. Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask;Japanese Journal of Applied Physics;1995-09-15
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