Electron‐beam‐induced pattern etching of AlGaAs using an ultrathin GaAs oxide as a resist
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346325
Reference14 articles.
1. Maskless etching of GaAs and InP using a scanning microplasma
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3. Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography
4. Defects induced by focused ion beam implantation in GaAs
5. Characterization of subsurface damage in GaAs processed by Ga+focused ion‐beam‐assisted Cl2etching using photoluminescence
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2. Focused, Nanoscale Electron-Beam-Induced Deposition and Etching;Critical Reviews in Solid State and Materials Sciences;2006-09
3. Focused electron-beam-induced etching of silicon dioxide;Journal of Applied Physics;2005-08
4. In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist;Applied Physics Letters;1999-03-29
5. Selective area chemical vapor deposition of titanium oxide films: Characterization of Ti(OC[sub 3]H[sub 7])[sub 4] as an electron beam resist;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
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