Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99104
Reference11 articles.
1. GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter
2. Integrated circuit repair using focused ion beam milling
3. Focused ion beam technology and applications
4. Pressure and irradiation angle dependence of maskless ion beam assisted etching of GaAs and Si
5. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. FOCUSED ION BEAM FABRICATION TECHNIQUES FOR OPTOELECTRONICS;Integrated Optoelectronics;1995
2. In situ GaAs/AlGaAs patterning using a thin epitaxial InGaAs layer mask as a negative-type electron-beam resist in Cl2 gas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-11
3. Insitunegative‐type patterning of a GaAs/AlGaAs quantum well using electron beam‐induced modification of an InGaAs epitaxial layer mask in Cl2gas;Applied Physics Letters;1994-08
4. Etching of InAs in HCl Gas and Selective Removal of InAs Layer on GaAs in Ultrahigh-Vacuum Processing System;Japanese Journal of Applied Physics;1993-10-15
5. Electron beam‐enhanced etching of InAs in Cl2gas and novelinsitupatterning of GaAs with an InAs mask layer;Applied Physics Letters;1993-09-27
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