Insitunegative‐type patterning of a GaAs/AlGaAs quantum well using electron beam‐induced modification of an InGaAs epitaxial layer mask in Cl2gas-Reference-Cited by-同舟云学术

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Insitunegative‐type patterning of a GaAs/AlGaAs quantum well using electron beam‐induced modification of an InGaAs epitaxial layer mask in Cl2gas

Published:1994-08 Issue:5 Volume:65 Page:627-629
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kohmoto S.,Sugimoto Y.,Takado N.,Asakawa K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.112252

Reference10 articles.

1. Electron Beam Excited GaAs Maskless Etching Using C1 2 Nozzle Installed FIB/EB Combined System

2. Electron-Beam-Induced Cl2Etching of GaAs

3. Novel electron‐beam lithography forinsitupatterning of GaAs using an oxidized surface thin layer as a resist

4. Insituelectron beam patterning for GaAs using electron‐cyclotron‐resonance plasma‐formed oxide mask and Cl2gas etching

5. New in situ electron beam patterning process for GaAs using an electron-cyclotron-resonance plasma-oxidized mask and Cl2 gas etching

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of AlGaAs/GaAs quantum wells overgrown on in situ Cl[sub 2]-etched GaAs substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

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