Electron Beam Excited GaAs Maskless Etching Using C1 2 Nozzle Installed FIB/EB Combined System
Author:
Affiliation:
1. NEC Corporation (Japan)
Publisher
SPIE
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Focused-ion-beam-inflicted surface amorphization and gallium implantation—new insights and removal by focused-electron-beam-induced etching;Nanotechnology;2011-04-07
2. Electron‐Beam–Induced Nanometer‐Scale Deposition;Advances in Imaging and Electron Physics;2006
3. Insitunegative‐type patterning of a GaAs/AlGaAs quantum well using electron beam‐induced modification of an InGaAs epitaxial layer mask in Cl2gas;Applied Physics Letters;1994-08
4. Insituelectron beam patterning for GaAs using electron‐cyclotron‐resonance plasma‐formed oxide mask and Cl2gas etching;Applied Physics Letters;1992-07-27
5. Photo-oxidation of GaAs and in situ electron-beam-induced chlorine etching;Semiconductor Science and Technology;1991-07-01
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